Carrier dynamics and gain saturation in quantum-well lasers
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چکیده
منابع مشابه
Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb/GaAs quantum well lasers
GaAsSb/GaAs quantum well QW lasers grown by solid source molecular beam epitaxy are fabricated into ridge lasers and tested. These devices have a lasing wavelength around 1.2 m that is substantially blueshifted relative to the electroluminescence peak. The magnitude of the blueshift increases as the cavity length is shortened, indicating that the blueshift increases with injection level. This b...
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We present a novel analysis for correcting the measured differential carrier lifetime to account for carrier population in both the barrier and separate confinement heterostructure (SCH) regions of quantum-well (QW) lasers. This analysis uses information obtained from the measured spontaneous emission spectra to correct the measured lifetime and obtain the intrinsic well lifetime. Once the intr...
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ژورنال
عنوان ژورنال: Optical and Quantum Electronics
سال: 1994
ISSN: 0306-8919,1572-817X
DOI: 10.1007/bf00326660